BUK7Y19-100E MOSFET N-Ch 200V 660mA SOT-223-3

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: BUK7Y19100E MOSFET NCh 200V 660mA SOT2233
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : BSP149H6327XTSA1

MOQ : 1000

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 200 V

Id - Continuous Drain Current : 660 mA

Rds On - Drain-Source Resistance : 1 Ohms

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MOSFET N-Ch 200V 660mA SOT-223-3

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	660 mA
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.8 W
Channel Mode:	Depletion
Qualification:	AEC-Q101
Series:	BSP149
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	21 ns
Forward Transconductance - Min:	400 mS
Height:	1.6 mm
Length:	6.5 mm
Product Type:	MOSFET
Rise Time:	3.4 ns
	1000

BUK7Y19-100E MOSFET N-Ch 200V 660mA SOT-223-3 Images

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