FDBL86363-F085 MOSFET N-Channel Power Trench MOSFET

Product Categories

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Contact Now

Name: FDBL86363F085 MOSFET NChannel Power Trench MOSFET
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : FDBL86363-F085

MOQ : 2000

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 80 V

Id - Continuous Drain Current : 240 A

Rds On - Drain-Source Resistance : 2 mOhms

Vgs - Gate-Source Voltage : - 20 V, + 20 V

Contact Now

MOSFET N-Channel Power Trench MOSFET

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-LL8-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	240 A
Rds On - Drain-Source Resistance:	2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	130 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	357 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	PowerTrench
Series:	FDBL86363_F085
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	33 ns
Height:	2.4 mm
Length:	10.48 mm
Product Type:	MOSFET
Rise Time:	63 ns
	2000

FDBL86363-F085 MOSFET N-Channel Power Trench MOSFET Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!