IRFR120NTRPBF MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: IRFR120NTRPBF MOSFET 100V 1 NCH HEXFET 210mOhms 167nC
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : IRFR120NTRPBF

MOQ : 2000

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 100 V

Id - Continuous Drain Current : 9.4 A

Rds On - Drain-Source Resistance : 210 mOhms

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MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	9.4 A
Rds On - Drain-Source Resistance:	210 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	48 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	23 ns
Height:	2.3 mm
Length:	6.5 mm
Product Type:	MOSFET
Rise Time:	23 ns
	2000

IRFR120NTRPBF MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC Images

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